? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 radar pulsed power transistor 380 watts, 1.2 - 1.4 ghz, 150us pulse, 10% duty production 02 feb 2012 mapr - 001214 - 380m00 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? npn silicon microwave power transistors ? common base configuration ? broadband class c operation ? high efficiency interdigitated geometry ? diffused emitter ballasting resistors ? gold metallization system ? internal input and output impedance matching ? hermetic metal/ceramic package ? rohs compliant outline drawing electrical specifications: t c = 25 5c ( room ambient ) parameter test conditions frequency symbol min max units collector - emitter breakdown voltage i c = 10ma bv ces 90 - v collector - emitter leakage current v ce = 44v i ces - 10 ma thermal resistance vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz r th(jc) - 0.25 c/w output power vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz p o 380 - w power gain vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz g p 8.8 - db gain flatness vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz g p 1 db droop vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz droop - 0.6 db collector efficiency vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz ? c 45 - % input return loss vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz rl - - 9 db load mismatch tolerance vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz vswr - t - 2:1 - load mismatch stability vcc = 44v, pin = 50w f = 1.2, 1.3, 1.4 ghz vswr - s - 1.5:1 - absolute maximum ratings at 25c parameter symbol rating units collector - emitter voltage v ces 88 v emitter - base voltage v ebo 3.0 v collector current (peak) i c 23.9 a power dissipation @ +25c p tot 700 w storage temperature t stg - 65 to +200 c junction temperature t j 200 c
? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 radar pulsed power transistor 380 watts, 1.2 - 1.4 ghz, 150us pulse, 10% duty production 02 feb 2012 mapr - 001214 - 380m00 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. gain vs. frequency typical rf performance collector efficiency vs. frequency freq. pin pout gain gain eff rl droop vswr - s vswr - t (ghz) (w) (w) (db) (db) (%) (db) (db) 1.5:1 2:01 1.2 50 458.5 9.65 50.75 - 23.6 0.15 s p 1.3 50 436.8 9.46 52.88 - 16.8 - 0.02 s p 1.4 50 421.3 9.31 0.34 59.52 - 15.2 - 0.01 s p 45 50 55 60 65 1.2 1.3 1.4 freq(ghz) eff(%) 8.5 9 9.5 10 1.2 1.3 1.4 freq(ghz) gain(db)
? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 radar pulsed power transistor 380 watts, 1.2 - 1.4 ghz, 150us pulse, 10% duty production 02 feb 2012 mapr - 001214 - 380m00 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. rf power transfer curve (output power vs. input power) f (mhz) z if ( ?? z of ( ?? 1200 1.3 - j1.89 1.08 - j1.83 1300 1.43 - j1.28 1.08 - j1.24 1400 1.51 - j0.73 1.1 - j0.75 broadband test fixture impedance 0 100 200 300 400 500 600 15 25 35 45 55 pin ( w ) pout ( w ) 1.2 ghz 1.3 ghz 1.4 ghz
? north america tel: 800.366.2266 ? europe tel: +353.21.244.6400 ? india tel: +91.80.43537383 ? china tel: +86.21.2407.1588 visit www.macomtech.com for additional data sheets and product information. m/a - com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 radar pulsed power transistor 380 watts, 1.2 - 1.4 ghz, 150us pulse, 10% duty production 02 feb 2012 mapr - 001214 - 380m00 advanced: data sheets contain information regarding a product m/a - com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a - com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly
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